sensitron semiconductor technical data data sheet 3463, rev. a ? 221 west industry court deer park, ny 11729-4681 (631) 586-7600 fax (631) 242-9798 ? ? world wide web site - http://www.sensitron.com ? e-mail address - sales@sensitron.com ? mbr1635-g/mbrb1635-g mbr1645-g/mbrb1645-g mbr1635-g/mbrb1635-g/mbr1645-g/mbrb1645-g schottky rectifier applications: ? ? ? ? switching power supply ? ? ? ? converters ? ? ? ? free-wheeling diodes ? ? ? ? reverse battery protection features: ? 150 c t j operation ? low forward voltage drop ? high purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ? high frequency operation ? guard ring for enhanced ruggedness and long term reliability mbr1635-g / mbr1645-g to-220ac mbrb1635-g / mbrb1645-g d 2 pak mechanical dimensions: in inches / mm 0.30(0.012)max 1.32(0.052) 1.22(0.048) 8.90(0.350) 8.50(0.335) 2.89(0.114) 2.52(0.099) 0.31(0.012) 0.53(0.021) to-220ac 12 3 3 2 1 5.08(0.200)ref 4.47(0.176) 4.67(0.184) 0.69(0.027) 0.94(0.037) 1.15(0.045) 1.40(0.055) dia 3.735(0.147) 3.935(0.155) 2.54(0.100) 2.92(0.115) 3.55(0.14) 3.96(0.16) 14.09(0.555) 13.47(0.530) 12.06(0.475) 12.46(0.491) max 10.54(0.415) 1 cathode anode 3
sensitron semiconductor technical data data sheet 3463, rev. a ? 221 west industry court deer park, ny 11729-4681 (631) 586-7600 fax (631) 242-9798 ? ? world wide web site - http://www.sensitron.com ? e-mail address - sales@sensitron.com ? mbr1635-g/mbrb1635-g mbr1645-g/mbrb1645-g d 2 pak 1.70(0.067) 1.30(0.051) 1.37(0.054) 1.17(0.046) anode 3 anode 1 cathode common base 0.46(0.018) 0.55(0.022) 5.08(0.200)ref. 4.78(0.188) 5.28(0.208) 1.22(0.048) 1.32(0.052) 4.20(0.165) 4.69(0.185) 0.69(0.027) 0.93(0.037) 2 8.50(0.335) 8.90(0.350) 3 1.14(0.045) 1.40(0.055) 14.73(0.580) 15.49(0.610) ref. 10.16(0.400) 2 maximum ratings: characteristics symbol condition max. units peak inverse voltage v rwm - 35 mbr1635-g mbrb1635-g 45 mbr1645-g mbrb1645-g v max. average forward current i f(av) @t c = 135c rated v r 16 a max. peak one cycle non- repetitive surge current i fsm surge applied at load condition halfwave, single phase, 60hz 150 a peak repetitive reverse surge current i rrm 2.0 sec 1.0khz 1.0 a
sensitron semiconductor technical data data sheet 3463, rev. a ? 221 west industry court deer park, ny 11729-4681 (631) 586-7600 fax (631) 242-9798 ? ? world wide web site - http://www.sensitron.com ? e-mail address - sales@sensitron.com ? mbr1635-g/mbrb1635-g mbr1645-g/mbrb1645-g electrical characteristics: characteristics symbol condition max. units max. forward voltage drop (per leg) * v f1 @ 16a, pulse, t j = 25 c 0.63 v v f2 @ 16a, pulse, t j = 125 c 0.57 v max. reverse current (per leg) * i r1 @v r = rated v r pulse t j = 25 c 1.0 ma i r2 @v r = rated v r , pulse t j = 125 c 40 ma max. junction capacitance (per leg) c t @v r = 5v, t c = 25 c f sig = 1mhz 1400 pf typical series inductance (per leg) l s measured lead to lead 5 mm from package body 8.0 nh max. voltage rate of change dv/dt - 10,00 v/ s * pulse width < 300s, duty cycle <2% thermal-mechanical specifications: characteristics symbol condition specification units max. junction temperature t j - -55 to +150 c max. storage temperature t stg - -55 to +150 c maximum thermal resistance junction to case r jc dc operation 1.5 c/w typical thermal resistance case to heat sink r cs mounting surface, smooth and greased 0.50 c/w approximate weight wt - 2 g mounting torque t m - 6(min.) 12(max.) kg-cm case style to-220ab d 2 pak(suffix ?s? for d 2 pak;?mbrb ? for d 2 pak)
sensitron semiconductor technical data data sheet 3463, rev. a ? 221 west industry court deer park, ny 11729-4681 (631) 586-7600 fax (631) 242-9798 ? ? world wide web site - http://www.sensitron.com ? e-mail address - sales@sensitron.com ? mbr1635-g/mbrb1635-g mbr1645-g/mbrb1645-g disclaimer: 1- the information given herein, including the specifications and dimensions, is subject to change without prior not ice to imp rove product characteristics. before ordering, purchasers are advised to contact the sensitron semiconductor sales department for th e latest version of the datasheet(s). 2- in cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users? fail-safe precautions or other arrangement . 3- in no event shall sensitron semiconductor be liable for any damages that may result from an accident or any other cause duri ng operation of the user?s units according to the datasheet(s). sensitron semiconductor assumes no responsibility for any intellec tual property claims or any other problems that may result from applications of information, products or circuits described in the d atasheets. 4- in no event shall sensitron semiconductor be liable for any failure in a semiconductor device or any secondary damage result ing from use at a value exceeding the absolute maximum rating. 5- no license is granted by the datasheet(s) under any patents or other rights of any third party or sensitron semiconductor. 6- the datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed writ ten permissi on of sensitron semiconductor. 7- the products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their applica tion will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or a ny third party. when exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws a nd regulations.
|
